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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Burst Refresh Current  
CKE: High; External clock: On;  
tCK, CL, nRFC: see the table of Timings used for IDD and IDDQ;  
BL: 8(1); AL: 0;  
: High between REF;  
Command, Address, Bank Address Inputs: partially toggling;  
Data IO: MID-LEVEL;  
IDD5B  
DM:stable at 0;  
Bank Activity: REF command every nRFC;  
Output Buffer and RTT: Enabled in Mode Registers(2);  
ODT Signal: stable at 0;  
Self Refresh Current: Normal Temperature Range  
TCASE: Normal Temperature Range;  
Auto Self-Refresh (ASR): Disabled(4);  
Self-Refresh Temperature Range (SRT):Normal(5);  
CKE: Low; External clock: Off;  
CK and : LOW; CL: see the table of Timings used for IDD and IDDQ;  
BL: 8(1);AL: 0;  
IDD6  
, Command, Address, Bank Address, Data IO: MID-LEVEL;  
DM:stable at 0;  
Bank Activity:Self-Refresh operation;  
Output Buffer and RTT: Enabled in Mode Registers(2);  
ODT Signal: MID-LEVEL  
Self-Refresh Current: Extended Temperature Range (6)  
TCASE: Extended Temperature Range;  
Auto Self-Refresh (ASR): Disabled(4);  
Self-Refresh Temperature Range (SRT):Extended(5);  
CKE: Low; External clock: Off; CK and : LOW; CL: see the table of Timings used for IDD and IDDQ;  
BL: 8(1);AL: 0;  
IDD6ET  
, Command, Address, Bank Address, Data IO: MID-LEVEL;  
DM:stable at 0;  
Bank Activity:Extended Temperature Self-Refresh operation;  
Output Buffer and RTT: Enabled in Mode Registers(2);  
ODT Signal: MID-LEVEL  
Auto Self-Refresh Current (6)  
Auto Self-Refresh (ASR): Enabled(4);  
Self-Refresh Temperature Range (SRT):Normal(5);  
IDD6TC  
Version 1.4  
05/2019  
124  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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