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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Overshoot and Undershoot Specifications  
AC Overshoot/Undershoot Specification for Address and Control Pins  
-
1600  
1866  
2133  
Unit  
V
Maximum peak amplitude allowed for overshoot area  
Maximum peak amplitude allowed for undershoot area.  
Maximum overshoot area above VDD  
0.4  
0.4  
0.4  
0.4  
0.4  
0.4  
V
0.33  
0.33  
0.28  
0.28  
0.25  
0.25  
V-ns  
V-ns  
Maximum undershoot area below VSS  
NOTE 1. The sum of the applied voltage (VDD) and peak amplitude overshoot voltage is not to exceed absolute maximum DC ratings  
NOTE 2. The sum of applied voltage (VDD) and the peak amplitude undershoot voltage is not to exceed absolute maximum DC ratings  
Maximum Amplitude  
Overshoot Area  
VDD  
VSS  
Undershoot Area  
Maximum Amplitude  
Time (ns)  
Version 1.4  
05/2019  
104  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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