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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
NOTE 1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance  
limits if temperature or voltage changes after calibration, see following section on voltage and temperature sensitivity.  
NOTE 2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS.  
NOTE 3. Pull-down and pull-up output driver impedances are recommended to be calibrated at 0.5 x VDDQ. Other calibration  
schemes may be used to achieve the linearity spec shown above, e.g. calibration at 0.2 x VDDQ and 0.8 x VDDQ.  
NOTE 4. Measurement definition for mismatch between pull-up and pull-down, MMPuPd:  
Measure RONPu and RONPd, both at 0.5 * VDDQ:  
RonPu RonPd  
MMPuPd  
=
X 100  
RonNom  
Version 1.4  
05/2019  
108  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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