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NT5CB128M16JR-DIH 参数 Datasheet PDF下载

NT5CB128M16JR-DIH图片预览
型号: NT5CB128M16JR-DIH
PDF下载: 下载PDF文件 查看货源
内容描述: [Automotive DDR3(L) 2Gb SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 154 页 / 4780 K
品牌: NANYA [ Nanya Technology Corporation. ]
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NTC Proprietary  
Level: Property  
DDR3(L)-2Gb SDRAM  
NT5CB(C)256M8JQ/NT5CB(C)128M16JR  
Output Slew Rate (Single-ended)  
1600  
1866  
2133  
Parameter Symbol  
-
Unit  
Min  
2.5  
Max  
Min  
2.5  
Max  
Min  
2.5  
-
Max  
Single-ended  
DDR3  
5
5
5
5
5
-
V/ns  
V/ns  
Output Slew  
Rate  
SRQse  
DDR3L  
1.75  
1.75  
Description: SR: Slew Rate  
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)  
se: Single-ended Signals  
For Ron = RZQ/7 setting  
Note 1): In two cases, a maximum slew rate of 6V/ns applies for a single DQ signal within a byte lane.  
Case 1 is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high to low or low to high)  
while all remaining DQ signals in the same byte lane are static (i.e. they stay at either high or low).  
Case 2 is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high to low or low to high)  
while all remaining DQ signals in the same byte lane are switching into the opposite direction (i.e. from low to high or high to low  
respectively). For the remaining DQ signal switching into the opposite direction, the regular maximum limit of 5 V/ns applies.  
Version 1.4  
05/2019  
101  
Nanya Technology Cooperation ©  
All Rights Reserved.  
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