Freescale Semiconductor, Inc.
Appendix: 68HC912D60A EEPROM
EEPROM Control Registers
.
EEPROG — EEPROM Control
$00F3
Bit 7
BULKP
1
6
0
0
5
AUTO
0
4
BYTE
0
3
ROW
0
2
ERASE
0
1
Bit 0
EELAT
0
EEPGM
0
RESET:
BULKP — Bulk Erase Protection
0 = EEPROM can be bulk erased.
1 = EEPROM is protected from being bulk or row erased.
Read anytime. Write anytime if EEPGM = 0 and PROTLCK = 0.
AUTO — Automatic shutdown of program/erase operation.
EEPGM is cleared automatically after the program/erase cycles are
finished when AUTO is set.
0 = Automatic clear of EEPGM is disabled.
1 = Automatic clear of EEPGM is enabled.
Read anytime. Write anytime if EEPGM = 0.
BYTE — Byte and Aligned Word Erase
0 = Bulk or row erase is enabled.
1 = One byte or one aligned word erase only.
Read anytime. Write anytime if EEPGM = 0.
ROW — Row or Bulk Erase (when BYTE = 0)
0 = Erase entire EEPROM array.
1 = Erase only one 32-byte row.
Read anytime. Write anytime if EEPGM = 0.
BYTE and ROW have no effect when ERASE = 0
Table 23-3. Erase Selection
BYTE
ROW
Block size
0
0
1
1
0
1
0
1
Bulk erase entire EEPROM array
Row erase 32 bytes
Byte or aligned word erase
Byte or aligned word erase
If BYTE = 1 only the location specified by the address written to the
programming latches will be erased. The operation will be a byte or
an aligned word erase depending on the size of written data.
68HC(9)12D60 — Rev 4.0
MOTOROLA
Advance Information
Appendix: 68HC912D60A EEPROM
413
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