Freescale Semiconductor, Inc.
EEPROM Memory
A program or erase operation should follow the sequence below:
1. Write BYTE, ROW and ERASE to the desired value, write EELAT
= 1
2. Write a byte or an aligned word to an EEPROM address
3. Write EEPGM = 1
4. Wait for programming (t
5. Write EEPGM = 0
6. Write EELAT = 0
) or erase (t
) delay time
erase
PROG
It is possible to program/erase more bytes or words without intermediate
EEPROM reads, by jumping from step 5 to step 2.
Advance Information
122
68HC(9)12D60 — Rev 4.0
EEPROM Memory
MOTOROLA
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