Freescale Semiconductor, Inc.
EEPROM Memory
EEPROM Control Registers
Table 8-2. Erase Selection
BYTE
ROW
Block size
0
0
1
1
0
1
0
1
Bulk erase entire EEPROM array
Row erase 32 bytes
Byte or aligned word erase
Byte or aligned word erase
ERASE — Erase Control
0 = EEPROM configuration for programming.
1 = EEPROM configuration for erasure.
Read anytime. Write anytime if EEPGM = 0.
Configures the EEPROM for erasure or programming.
EELAT — EEPROM Latch Control
0 = EEPROM set up for normal reads.
1 = EEPROM address and data bus latches set up for
programming or erasing.
Read anytime. Write anytime if EEPGM = 0.
BYTE, ROW, ERASE and EELAT bits can be written simultaneously
or in any sequence.
EEPGM — Program and Erase Enable
0 = Disables program/erase voltage to EEPROM.
1 = Applies program/erase voltage to EEPROM.
The EEPGM bit can be set only after EELAT has been set. When
EELAT and EEPGM are set simultaneously, EEPGM remains clear
but EELAT is set.
The BULKP, BYTE, ROW, ERASE and EELAT bits cannot be
changed when EEPGM is set. To complete a program or erase, two
successive writes to clear EEPGM and EELAT bits are required
before reading the programmed data. A write to an EEPROM location
has no effect when EEPGM is set. Latched address and data cannot
be modified during program or erase.
68HC(9)12D60 — Rev 4.0
MOTOROLA
Advance Information
EEPROM Memory
121
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