Freescale Semiconductor, Inc.
Advance Information — 68HC(9)12D60
Section 8. EEPROM Memory
8.1 Contents
8.2
8.3
8.4
8.5
Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .115
Future EEPROM Support . . . . . . . . . . . . . . . . . . . . . . . . . . . .116
EEPROM Programmer’s Model . . . . . . . . . . . . . . . . . . . . . . .117
EEPROM Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . .118
8.2 Introduction
The 68HC(9)12D60 EEPROM nonvolatile memory is arranged in a 16-
bit configuration. The EEPROM array may be read as either bytes,
aligned words or misaligned words. Access times are one bus cycle for
byte and aligned word access and two bus cycles for misaligned word
operations.
Programming is by byte or aligned word. Attempts to program or erase
misaligned words will fail. Only the lower byte will be latched and
programmed or erased. Programming and erasing of the user EEPROM
can be done in all modes.
Each EEPROM byte or aligned word must be erased before
programming. The EEPROM module supports byte, aligned word, row
(32 bytes) or bulk erase, all using the internal charge pump. The erased
state is $FF. The EEPROM module has hardware interlocks which
protect stored data from corruption by accidentally enabling the
program/erase voltage. Programming voltage is derived from the
internal V supply with an internal charge pump.
DD
68HC(9)12D60 — Rev 4.0
MOTOROLA
Advance Information
115
EEPROM Memory
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