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V29LC51001 参数 Datasheet PDF下载

V29LC51001图片预览
型号: V29LC51001
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位131,072 ×8位的5伏CMOS FLASH MEMORY [1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 12 页 / 55 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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MOSEL VITELIC
V29LC51001
1 MEGABIT (131,072 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Description
PRELIMINARY
Features
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128Kx8-bit Organization
Address Access Time: 90 ns
Single 5V
±
10% Power Supply
Sector Erase Mode Operation
512 bytes per Sector, 256 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Program Cycle Time: 30
µ
s (Max)
Minimum 1,000 Erase-Program Cycles
Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100µA (Max)
Low V
CC
Program Inhibit Below 3.2V
Self-timed program/erase operations
CMOS and TTL Interface
Packages:
– 32-pin Plastic DIP
– 32-pin PLCC
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The V29LC51001 is a high speed 131,072 x 8 bit
CMOS flash memory. Programming or erasing the
device is done with a single 5 Volt power supply.
The device has separate chip enable CE, program
enable WE, and output enable OE controls to
eliminate bus contention.
The V29LC51001 features a sector erase
operation which allows each sector to be erased
and reprogrammed without affecting data stored in
other sectors. The device also supports full chip
erase.
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Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
P
J
Access Time (ns)
90
Temperature
Mark
Blank
V29LC51001 Rev. 0.5 October 2000
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