ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA60H1317M
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (V
GG
).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around V
GG
=4V, the output power and drain current increases substantially.
Around V
GG
=4.5V (typical) to V
GG
=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power P
in
. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance Z
L
=50Ω?
c) Is the source impedance Z
G
=50Ω?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do
not leakage the unnecessary electric wave and use this products without cause damage for human and property per
normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products are highly
reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is
sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements.
Examples of critical communications elements would include transmitters for base station applications and fixed
station applications that operate with long term continuous transmission and a higher on-off frequency during
transmitting, especially for systems that may have a high impact to society.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and
less than 90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of
operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the
worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the
module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load
mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing
line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level
also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
way from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
RA60H1317M
25 Jun 2010
8/9
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
