ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA60H1317M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
f=135MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
DRAIN CURRENT I
DD
(A)
f=155MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
16
14
I
DD
16
14
12
I
DD
12
10
8
6
4
2
0
10
8
6
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
80
OUTPUT POWER P
out
(W)
70
60
50
40
30
20
10
0
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
DD
f=175MHz,
V
DD
=12.5V,
P
in
=50mW
P
out
16
14
12
10
8
6
4
2
0
DRAIN CURRENT I
DD
(A)
RA60H1317M
DRAIN CURRENT I
DD
(A)
25 Jun 2010
4/9
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
