ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA60H1317M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
90
OUTPUT POWER P
out
(W)
80
INPUT VSWR
ρ
in
(-)
70
60
50
40
30
20
10
0
135
ρ
in
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
P
out
2
nd
, 3 HARMONICS versus FREQUENCY
-20
HARMONICS (dBc)
-30
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
rd
90
80
70
TOTAL EFFICIENCY
η
T
(%)
60
50
40
30
20
10
0
175
η
T
-40
-50
3
rd
-60
-70
135
145
155
165
FREQUENCY f(MHz)
145
155
165
FREQUENCY f(MHz)
175
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
60
50
40
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
I
DD
f=135MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
DRAIN CURRENT I
DD
(A)
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
60
50
40
30
20
10
0
-10
-5
0
5
10
f=155MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
14
12
10
8
6
4
2
0
14
12
10
8
I
DD
6
4
2
0
20
15
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
OUTPUT POWER
P
out
(dBm)
POWER GAIN Gp(dB)
60
50
40
30
20
10
0
-10
-5
0
5
10
f=175MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
14
12
10
8
6
4
2
0
DRAIN CURRENT I
DD
(A)
I
DD
15
20
INPUT POWER P
in
(dBm)
RA60H1317M
DRAIN CURRENT
I
DD
(A)
25 Jun 2010
3/9
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
