ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RoHS COMPLIANCE
RA60H1317M
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
f=135-175MHz,
Z
G
=Z
L
=50Ω
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
RATING
17
6
100
75
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
135
60
TYP
-
-
-
-
-
1
MAX
175
-
-
-25
3:1
-
UNIT
MHz
W
%
dBc
—
mA
—
—
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
40
-
-
-
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<70W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=60W (V
GG
control),
Load VSWR=8:1
No parasitic oscillation
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA60H1317M
25 Jun 2010
2/9