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M30622MA-D00GP 参数 Datasheet PDF下载

M30622MA-D00GP图片预览
型号: M30622MA-D00GP
PDF下载: 下载PDF文件 查看货源
内容描述: 单芯片16位CMOS微机 [SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER]
分类和应用: 计算机
文件页数/大小: 276 页 / 3532 K
品牌: MITSUBISHI [ Mitsubishi Group ]
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Mitsubishi microcomputers  
M16C / 62 Group  
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER  
Description (Flash Memory Version)  
Outline Performance  
Table 1.28.1 shows the outline performance of the M16C/62 (flash memory version) and Table 1.28.2  
shows the power supply current( Typ.).  
Table 1.28.1. Outline Performance of the M16C/62 (flash memory version)  
Item  
Performance  
Power supply voltage  
5V version: 2.7V to 5.5 V  
(f(XIN)=16MHz, without wait, 4.2V to 5.5V,  
f(XIN)=10MHz, with one wait, 2.7V to 5.5V)  
3V version: 2.4V to 3.6 V  
(f(XIN)=10MHz, without wait, 2.7V to 3.6V,  
f(XIN)=7MHz, without wait, 2.4V to 3.6V)  
5V version: 4.2V to 5.5 V  
Program/erase voltage  
(f(XIN)=12.5MHz, with one wait,  
f(XIN)=6.25MHz, without wait)  
3V version: 2.7V to 3.6 V  
(f(XIN)=10MHz, with one wait,  
f(XIN)=6.25MHz, without wait)  
Flash memory operation mode  
Three modes (parallel I/O, standard serial I/O, CPU rewrite)  
Erase block  
division  
See Figure 1.28.1  
User ROM area  
Boot ROM area  
One division (8 Kbytes) (Note 1)  
In units of pages (in units of 256 bytes)  
Collective erase/block erase  
Program/erase control by software command  
Protected for each block by lock bit  
8 commands  
Program method  
Erase method  
Program/erase control method  
Protect method  
Number of commands  
Program/erase count  
100 times  
Parallel I/O and standard serial modes are supported.  
ROM code protect  
3V version main clock input  
oscillation frequency(Max.)  
(Note2)  
10MHz (VCC=2.7V to 3.6V,without wait)  
10 X VCC - 17 MHz (VCC=2.4V to 2.7V,without wait)  
3V version power supply  
current (Notes 3, 4)  
12.0mA(Typ.), 21.25mA(Max.) (VCC=3V, f(XIN)=10MHz, square wave, no division, without wait)  
40µA(Typ.) (VCC=3V, f(XCIN)=32kHz, square wave, without wait) [operate in RAM]  
700µA(Typ.) (VCC=3V, f(XCIN)=32kHz, square wave, without wait) [operate in flash memory]  
Note1: The boot ROM area contains a standard serial I/O mode control program which is stored in it when shipped from the factory.  
This area can be erased and programmed in only parallel I/O mode.  
Note2: Refer to recommended operating conditions about 5 V version. 3V version relationship between main clock oscillation  
frequency and supply voltage are as follows.  
Main clock input oscillation frequency  
(flash memory 3V version, without wait)  
10.0  
10 X VCC - 17MH  
Z
7.0  
0.0  
2.4  
Supply voltage[V]  
2.7  
3.6  
(BCLK: no division)  
Note3: Refer to electric characteristic about 5V version.  
Note4: A standard value in stop and wait modes do not depend on a kind of memory to have built-in and is the same class. Refer to  
electric characteristic in VCC=3V.  
Table 1.28.2. Power supply current (typ.) of the M16C/62 (flash memory version)  
Standard (Typ.)  
Remark  
Parameter  
Measuring condition  
Read  
Program  
28mA  
-
Erase  
25mA  
-
Division by 4 in program/erase  
5V power supply current(5V version) f(XIN)=16MHz, without wait, No division  
3V power supply current(5V version) f(XIN)=10MHz, with wait, No division  
3V power supply current(3V version) f(XIN)=10MHz, without wait, No division  
35mA  
13.5mA  
12mA  
Division by 2 in program/erase  
17mA  
14mA  
234  
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