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CM200RXL-24S 参数 Datasheet PDF下载

CM200RXL-24S图片预览
型号: CM200RXL-24S
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 580 K
品牌: MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
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< IGBT MODULES >
CM200RXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Note9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 B1 tapping screw"
The length of the screw depends on thickness (t1.6~t2.0) of the PCB.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
GEon
R
G
Item
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
Conditions
Applied across P-N terminals
Applied across GB-EB/
G*P-E*P/G*N-E*N(*=U, V, W) terminals
Per switch
Inverter IGBT
Brake IGBT
Limits
Min.
-
13.5
0
6.2
Typ.
600
15.0
-
-
Max.
850
16.5
22
62
Unit
V
V
Ω
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: DIODE (*=U/V/W), DiBr: BRAKE DIODE, Th: NTC thermistor
Publication Date : December 2013
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