< IGBT MODULES >
CM200RXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, V
GE
=±15 V, R
G
=0 Ω, INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
1000
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, V
GE
=±15 V, I
C
=200 A, INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
1000
t
d(off)
t
f
t
d(on)
t
d(on)
t
d(off)
t
r
(ns)
(ns)
t
f
SWITCHING TIME
SWITCHING TIME
t
r
100
100
10
10
100
1000
10
0.1
1
10
100
COLLECTOR CURRENT
I
C
(A)
EXTERNAL GATE RESISTANCE
R
G
(Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, V
GE
=±15 V, R
G
=0 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
100
100
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, V
GE
=±15 V, I
C
/I
E
=200 A,
INDUCTIVE LOAD, PER PULSE
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
E
on
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
E
on
E
off
E
rr
10
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
E
off
10
E
rr
1
10
100
1000
1
0.1
1
10
100
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
EXTERNAL GATE RESISTANCE
R
G
(Ω)
Publication Date : December 2013
9
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
