< IGBT MODULES >
CM200RXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont; T
j
=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
V
EC
(Note.1)
Item
Conditions
I
E
=200 A, G-E short-circuited,
Refer to the figure of test circuit
(Note5)
Limits
Min.
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
1.80
1.80
1.80
1.70
1.70
1.70
-
10.7
30.7
21.5
14.2
-
9.8
Limits
Min.
-
-
5.4
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
6.0
1.80
2.00
2.05
1.70
1.90
1.95
-
-
-
233
-
-
-
-
-
1.80
1.80
1.80
1.70
1.70
1.70
-
5.3
8.6
10.7
10.2
0
Max.
1.0
0.5
6.6
2.25
-
-
2.15
-
-
10
2.0
0.17
-
300
200
600
300
1.0
2.25
-
-
2.15
-
-
300
-
-
-
-
-
Max.
2.25
-
-
2.15
-
-
300
-
-
-
-
2.0
-
Unit
(Terminal)
V
Emitter-collector voltage
V
EC
(Note.1)
I
E
=200 A,
G-E short-circuited,
(Note5)
(Chip)
V
ns
μC
mJ
mJ
mΩ
Ω
t
rr
Q
rr
E
on
E
off
E
rr
(Note1)
(Note1)
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
V
CC
=600 V, I
E
=200 A, V
GE
=±15 V,
R
G
=0 Ω, Inductive load
V
CC
=600 V, I
C
=I
E
=200 A,
V
GE
=±15 V, R
G
=0 Ω, T
j
=150 °C,
Inductive load
Main terminals-chip, per switch,
T
C
=25 °C
Per switch
(Note4)
(Note1)
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
R
CC'+EE'
r
g
BRAKE PART IGBT/DIODE
Symbol
I
CES
I
GES
V
GE(th)
V
CEsat
(Terminal)
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Conditions
V
CE
=V
CES
, G-E short-circuited
V
GE
=V
GES
, C-E short-circuited
I
C
=10 mA, V
CE
=10 V
I
C
=100 A, V
GE
=15 V,
Refer to the figure of test circuit
(Note5)
Unit
mA
μA
V
V
Collector-emitter saturation voltage
V
CEsat
(Chip)
I
C
=100 A,
V
GE
=15 V,
(Note5)
V
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
I
RRM
V
F
(Terminal)
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Repetitive peak reverse current
V
CC
=600 V, I
C
=100 A, V
GE
=15 V
V
CC
=600 V, I
C
=100 A, V
GE
=±15 V,
R
G
=6.2 Ω, Inductive load
V
R
=V
RRM
, G-E short-circuited
I
F
=100 A, G-E short-circuited,
Refer to the figure of test circuit
(Note5)
V
CE
=10 V, G-E short-circuited
nF
nC
ns
mA
V
Forward voltage
V
F
(Chip)
I
F
=100 A,
(Note5)
V
ns
μC
mJ
mJ
Ω
t
rr
Q
rr
E
on
E
off
E
rr
r
g
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal gate resistance
V
CC
=600 V, I
E
=100 A, V
GE
=±15 V,
R
G
=6.2 Ω, Inductive load
V
CC
=600 V, I
C
=I
E
=100 A,
V
GE
=±15 V, R
G
=6.2 Ω, T
j
=150 °C,
Inductive load
-
Publication Date : December 2013
3
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
