< IGBT MODULES >
CM200RXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont; T
j
=25 °C, unless otherwise specified)
NTC THERMISTOR PART
Symbol
R
25
ΔR/R
B
(25/50)
P
25
Item
Zero-power resistance
Deviation of resistance
B-constant
Power dissipation
T
C
=25 °C
(Note4)
(Note4)
(Note6)
Conditions
Limits
Min.
4.85
-7.3
-
-
Typ.
5.00
-
3375
-
Max.
5.15
+7.8
-
10
Unit
kΩ
%
K
mW
R
100
=493 Ω, T
C
=100 °C
Approximate by equation
T
C
=25 °C
(Note4)
THERMAL RESISTANCE CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)D
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Contact thermal resistance
Thermal resistance
Item
Conditions
Junction to case, per Inverter IGBT
Junction to case, per Inverter DIODE
Junction to case, per Brake IGBT
Junction to case, per Brake DIODE
Case to heat sink, per 1 module,
Thermal grease applied
(Note4, 7)
(Note4)
(Note4)
Limits
Min.
-
-
-
-
-
Typ.
-
-
-
-
7
Max.
0.10
0.19
0.20
0.29
-
Unit
K/W
K/W
K/kW
(Note4)
(Note4)
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
d
s
d
a
m
e
c
Mounting torque
Mounting torque
Creepage distance
Clearance
mass
Flatness of base plate
Item
Main terminals
Mounting to heat sink
Terminal to terminal
Terminal to base plate
Terminal to terminal
Terminal to base plate
-
On the centerline X, Y
(Note8)
Conditions
M 5 screw
M 5 screw
Limits
Min.
2.5
2.5
16.3
16.8
10
10
-
±0
Typ.
3.0
3.0
-
-
-
-
690
-
Max.
3.5
3.5
-
-
-
-
-
+100
Unit
N·m
N·m
mm
mm
g
μm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
j
) should not increase beyond T
j m a x
rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed T
j m a x
rating.
4. Case temperature (T
C
) and heat sink temperature (T
s
) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit.
R
1
1
6.
B
(
25
/
50
)
=
ln(
25
) /(
)
,
−
R
50
T
25
T
50
R
25
: resistance at absolute temperature T
25
[K]; T
25
=25 [°C]+273.15=298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
=50 [°C]+273.15=323.15 [K]
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
-: Concave
+: Convex
X
Y
mounting side
mounting side
Label side
mounting side
-: Concave
+: Convex
Publication Date : December 2013
4
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
