MITSUBISHI HVIGBT MODULES
CM1600HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
10
1
7
5
3
2
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
2
7
5
REVERSE RECOVERY TIME (
µs
)
3
2
3
2
SWITCHING TIMES (
µs
)
t
d(off)
10
0
7
5
3
2
10
1
7
5
3
2
10
3
l
rr
7
5
3
2
t
d(on)
t
f
10
-1
7
5
3
2
10
0
7
5
3
2
10
2
7
5
t
r
t
rr
3
2
10
-2 1
10
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
4
10
-1 1
10
2 3
5 7
10
2
2 3
5 7
10
3
2 3
10
1
5 7
10
4
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
5000
V
CC
≤
1150V, V
GE
= +/-15V
T
j
= 125°C, R
G(off)
≥
1.6Ω
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2
Single Pulse, T
C
= 25°C
R
th(j–c)Q
= 10K/kW
R
th(j–c)R
= 17K/kW
1.0
4000
0.8
COLLECTOR CURRENT (A)
3000
0.6
2000
0.4
0.2
1000
0
-3
10
2 3 5 7
10
-2
2 3 5 7
10
-1
2 3 5 7
10
0
2 3 5 7
10
1
TIME (s)
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
REVERSE RECOVERY CURRENT (A)
V
CC
= 850V, V
GE
=
±15V
R
G(on)
= R
G(off)
= 1.6Ω
T
j
= 125°C, Inductive load
V
CC
= 850V, V
GE
=
±15V
R
G(on)
= R
G(off)
= 1.6Ω
T
j
= 125°C, Inductive load
10
4
7
5
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
