MITSUBISHI HVIGBT MODULES
CM1600HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
3200
T
j
= 25°C
2800
V
GE
= 12V
V
GE
= 15V
2800
3200
TRANSFER CHARACTERISTICS
(TYPICAL)
V
CE
= 10V
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
2400
2000
1600
1200
800
V
GE
= 20V
2400
2000
1600
1200
800
400
0
V
GE
= 10V
V
GE
= 8V
400
0
T
j
= 25°C
T
j
= 125°C
0
2
4
6
8
10
12
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
5
V
GE
= 15V
4
EMITTER-COLLECTOR VOLTAGE (V)
T
j
= 25°C
T
j
= 125°C
4
3
3
2
2
1
1
T
j
= 25°C
T
j
= 125°C
0
0
800
1600
2400
3200
0
0
800
1600
2400
3200
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
