MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1600HC-34H
q
I
C ................................................................
1600A
q
V
CES .......................................................
1700V
q
Insulated Type
q
1-element in a Pack
q
AISiC Baseplate
q
Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
57
±0.25
57
±0.25
4 - M8 NUTS
C
C
C
C
C
20
124
±0.25
CM
E
E
140
30
G
E
E
E
E
C
G
CIRCUIT DIAGRAM
16.5
3 - M4 NUTS
2.5
18.5
61.5
screwing depth
min. 7.7
6 -
φ
7 MOUNTING HOLES
5
screwing depth
min. 11.7
35
11
14.5
18
38
+1
0
28
+1
0
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
31.5
5
Jul. 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
