MITSUBISHI HVIGBT MODULES
CM1600HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
op
T
stg
V
iso
t
psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
V
GE
= 0V, T
j
= 25°C
V
CE
= 0V, T
j
= 25°C
T
C
= 80°C
Pulse
Pulse
T
C
= 25°C, IGBT part
Conditions
Ratings
1700
±20
1600
3200
1600
3200
12500
–40 ~ +150
–40 ~ +125
–40 ~ +125
4000
10
Unit
V
V
A
A
A
A
W
°C
°C
°C
V
µs
(Note 1)
(Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min.
V
CC
= 1150V, V
CES
≤
1700V, V
GE
= 15V
T
j
= 125°C
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
g
V
EC (Note 2)
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
t
rr (Note 2)
Q
rr (Note 2)
E
rec (Note 2)
Note 1.
2.
3.
4.
Item
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
Conditions
V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C
I
C
= 160mA, V
CE
= 10V, T
j
= 25°C
V
GE
= V
GES
, V
CE
= 0V, T
j
= 25°C
I
C
= 1600A, V
GE
= 15V, T
j
= 25°C
I
C
= 1600A, V
GE
= 15V, T
j
= 125°C
V
CE
= 10V, f = 100kHz
V
GE
= 0V, T
j
= 25°C
V
CC
= 850V, I
C
= 1600A, V
GE
= 15V, T
j
= 25°C
I
E
= 1600A, V
GE
= 0V, T
j
= 25°C
(Note 4)
I
E
= 1600A, V
GE
= 0V, T
j
= 125°C
(Note 4)
V
CC
= 850V, I
C
= 1600A, V
GE
=
±15V
R
G(on)
= 1.6Ω, T
j
= 125°C, L
s
= 100nH
Inductive load
V
CC
= 850V, I
C
= 1600A, V
GE
=
±15V
R
G(off)
= 1.6Ω, T
j
= 125°C, L
s
= 100nH
Inductive load
V
CC
= 850V, I
C
= 1600A, V
GE
=
±15V
R
G(on)
= 1.6Ω, T
j
= 125°C, L
s
= 100nH
Inductive load
Min
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
5.5
—
2.60
3.10
140
20.0
7.6
13.2
2.30
1.85
—
—
540
—
—
580
—
420
220
Max
24
6.5
0.5
3.30
—
—
—
—
—
3.00
—
1.60
1.30
—
2.70
0.80
—
2.70
—
—
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
mJ/pulse
µs
µs
mJ/pulse
µs
µC
mJ/pulse
(Note 4)
(Note 4)
Pulse width and repetition rate should be such that junction temperature (T
j
) does not exceed T
opmax
rating (125°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (T
j
) should not exceed T
jmax
rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
