MITSUBISHI HVIGBT MODULES
CM1200HC-50H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
3000
V
CC
≤
1700V, V
GE
= +/-15V
T
j
= 125°C, R
G(off)
≥
1.6Ω
3000
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(RRSOA)
V
CC
≤
1700V, di/dt
≤
4000A/µs
T
j
= 125°C
2500
REVERSE RECOVERY CURRENT (A)
0
500
1000
1500
2000
2500
3000
2500
COLLECTOR CURRENT (A)
2000
2000
1500
1500
1000
1000
500
500
0
0
0
500
1000
1500
2000
2500
3000
COLLECTOR-EMITTER VOLTAGE (V)
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005