MITSUBISHI HVIGBT MODULES
CM1200HC-50H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
V
CC
= 1250V, I
C
= 1200A
T
j
= 25°C
V
GE
= 0V, T
j
= 25°C
f = 100kHz
C
ies
16
CAPACITANCE (nF)
10
2
7
5
3
2
GATE-EMITTER VOLTAGE (V)
12
C
oes
10
1
7
5
3
2
8
C
res
4
10
0 -1
10
2 3
5 7
10
0
2 3
5 7
10
1
2 3
5 7
10
2
0
0
3
6
GATE CHARGE (
µC
)
9
12
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3
V
CC
= 1250V, V
GE
=
±15V
R
G(on)
= R
G(off)
= 1.6Ω
T
j
= 125°C, Inductive load
6
E
on
5
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
V
CC
= 1250V, I
C
= 1200A
V
GE
=
±15V
T
j
= 125°C, Inductive load
2.5
SWITCHING ENERGIES (J/pulse)
SWITCHING ENERGIES (J/pulse)
E
on
4
2
E
off
1.5
3
1
E
rec
2
E
off
1
E
rec
0
5
10
15
20
0.5
0
0
400
800
1200
1600
2000
2400
0
COLLECTOR CURRENT (A)
GATE RESISTANCE (
Ω
)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
