MITSUBISHI HVIGBT MODULES
CM1200HC-50H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin,
λ
grease
= 1W/m·K
Min
—
—
—
Limits
Typ
—
—
6.0
Max
8.5
17.0
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
Min
7.0
3.0
1.0
—
600
19.5
32.0
—
—
Limits
Typ
—
—
—
1.5
—
—
—
10
0.16
Max
13.0
6.0
2.0
—
—
—
—
—
—
Unit
M
—
CTI
d
a
d
s
L
C-E(int)
R
C-E(int)
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
N·m
kg
—
mm
mm
nH
mΩ
IGBT part
T
C
= 25°C
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
