MITSUBISHI HVIGBT MODULES
CM1200HC-50H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2400
T
j
= 25°C
V
GE
= 12V
2000
V
GE
= 20V
2000
V
GE
= 10V
2400
TRANSFER CHARACTERISTICS
(TYPICAL)
V
CE
= 10V
COLLECTOR CURRENT (A)
1600
V
GE
= 15V
COLLECTOR CURRENT (A)
1600
1200
1200
800
800
400
V
GE
= 8V
400
T
j
= 25°C
T
j
= 125°C
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
6
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
6
V
GE
= 15V
5
EMITTER-COLLECTOR VOLTAGE (V)
5
4
4
3
3
2
2
1
T
j
= 25°C
T
j
= 125°C
0
0
400
800
1200
1600
2000
2400
1
T
j
= 25°C
T
j
= 125°C
0
0
400
800
1200
1600
2000
2400
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
