MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM-20
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
160
TYPICAL EXAMPLE
140
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
140
TYPICAL EXAMPLE
T
j
= 125°C
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
120
100
80
60
40
20
I QUADRANT
III QUADRANT
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
3 TYPICAL
2 EXAMPLE
10
2
T
j
= 125°C
7 I
T
= 4A
5
τ
= 500µs
3 V
D
= 200V
2 f = 3Hz
VOLTAGE WAVEFORM
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
100 (%)
TYPICAL EXAMPLE
I
FGT I
I
RGT I
I
RGT III
t
(dv/dt)
C
V
D
CURRENT WAVEFORM
(di/dt)
C
I
T
τ
t
10
1
7
I QUADRANT
5
3 MINIMUM
2 CHARAC-
10
0
TERISTICS III QUADRANT
7 VALUE
5
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
TEST PROCEDURE
3
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
