MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM-20
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
140
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6
AMBIENT TEMPERATURE (°C)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
120
100
80
60
40
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6
120 120 t2.3
100 100 t2.3
60 60 t2.3
NATURAL
CONVECTION
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
8 10 12 14 16
8
10
12
14
16
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
LACHING CURRENT (mA)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
100 (%)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
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DISTRIBUTION
+
T
2
, G
+
TYPICAL
�½
–
T
2
, G
–
EXAMPLE
+
T
2
, G
–
TYPICAL
EXAMPLE
10
0
–40
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
