MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM-20
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8PM-20
OUTLINE DRAWING
Dimensions
in mm
10.5
MAX
5.2
1.2
2.8
5.0
17
8.5
V
TYPE
NAME
φ3.2 ±
0.2
3.6
VOLTAGE
CLASS
1.3
MAX
13.5
MIN
0.8
2.54
2.54
0.5
2.6
¡I
T (RMS)
........................................................................ 8A
¡V
DRM
..................................................................... 1000V
¡I
FGT
!
, I
RGT
!
, I
RGT
#
........................................... 30mA
¡V
iso
........................................................................ 1500V
¡UL
Recognized: File No. E80276
V
Measurement point of
case temperature
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
20
1000
1200
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=88°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
4.5
Ratings
8
80
26
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
V1.
Gate open.
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
