MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8PM-20
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Gate trigger
current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
!
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
case
V4
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=12A, Instantaneous measurement
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
V3
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
3.7
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
Voltage
class
V
DRM
(V)
(dv/dt)
c
Symbol
Min.
Unit
Test conditions
Commutating voltage and current waveforms
(inductive load)
R
—
1. Junction temperature
T
j
=125°C
V/µs
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=–4.0A/ms
3. Peak off-state voltage
V
D
=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
20
1000
TIME
TIME
V
D
L
10
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
T
j
= 125°C
T
j
= 25°C
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
