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PC28F128G18FF 参数 Datasheet PDF下载

PC28F128G18FF图片预览
型号: PC28F128G18FF
PDF下载: 下载PDF文件 查看货源
内容描述: 128MB, 256MB,512MB ,1GB的StrataFlash存储器 [128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory]
分类和应用: 存储
文件页数/大小: 118 页 / 1154 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory  
Global Main-Array Protection  
Global Main-Array Protection  
Global main-array protection can be implemented by controlling VPP. When program-  
ming or erasing main-array blocks, VPP must be equal to or greater than VPPL, min . When  
VPP is below VPPLK, PROGRAM or ERASE operations are inhibited, thus providing abso-  
lute protection of the main array.  
Various methods exist for controlling VPP, ranging from simple logic control to off-board  
voltage control. The following figure shows example VPP supply connections that can be  
used to support PROGRAM or ERASE operations and main-array protection.  
Figure 14: VPP Supply Connection Example  
VCC  
VCC  
VCC  
VPP  
VCC  
VPP  
VPPH  
10kΩ  
VPPL  
PROT#  
• Factory programming: VPP = VPPH  
• Program/erase protection: VPP VPPLK  
• Program/Erase enable: PROT# = VIH  
• Program/Erase protection: PROT# = VIL  
VCC  
VCC  
VCC  
VPP  
VCC  
VPP  
VPPL  
VPPL  
VPPH  
• Low-voltage programming  
or  
• Low-Voltage programming: VPP = VCC  
• Program/Erase protection: None  
• Factory programming  
PDF: 09005aef8448483a  
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
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© 2011 Micron Technology, Inc. All rights reserved.