128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Features
Micron StrataFlash Embedded Memory
P/N – PC28F128G18xx
P/N – PC28F256G18xx
P/N – PC28F512G18xx
P/N – PC28F00AG18xx
• Power
– Core voltage: 1.7 V - 2.0 V
– I/O voltage: 1.7 V - 2.0 V
– Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– Deep Power-Down mode: 2 μA (typ)
– Automatic Power Savings mode
– 16-word synchronous-burst read current: 23 mA
(typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
• Software
Features
• High-Performance Read, Program and Erase
– 96 ns initial read access
– 108 MHz with zero wait-state synchronous burst
reads: 7 ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst
reads: 5.5 ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst
Reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered Programming: 2.0 μs/Word (typ), 512-
Mbit 65 nm
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended com-
mand set (ECS) compatible
– Common Flash interface (CFI) capable
• Security
– Block Erase: 0.9 s per block (typ)
– 20 μs (typ) program/erase suspend
• Architecture
– 16-bit wide data bus
– Multi-Level Cell Technology
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
– Symmetrically-Blocked Array Architecture
– 256-Kbyte Erase Blocks
– 1-Gbit device: Eight 128-Mbit partitions
– 512-Mbit device: Eight 64-Mbit partitions
– 256-Mbit device: Eight 32-Mbit partitions
– 128-Mbit device: Eight 16-Mbit partitions
– Read-While-Program and Read-While-Erase
– Status Register for partition/device status
– Blank Check feature
• Density and packaging
– 128Mb, 256Mb, 512Mbit, and 1-Gbit
– Address-data multiplexed and non-multiplexed
interfaces
– 64-Ball Easy BGA
• Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
MICRON [ MICRON TECHNOLOGY ]
