128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Configuration and Memory Map
Configuration and Memory Map
The device features a symmetrical block architecture. The main array of the 128Mb de-
vice is divided into eight 16Mb partitions. Each partition is divided into eight 256KB
blocks (8 x 8 = 64 blocks).
The main array of the 256Mb device is divided into eight 32Mb partitions. Each parti-
tion is divided into sixteen 256KB blocks (8 x 16 = 128 blocks).
The main array of the 512Mb device is divided into eight 64Mb partitions. Each parti-
tion is divided into thirty-two 256KB blocks (8 x 32 = 256 blocks).
The main array of the 1Gb device is divided into eight 128Mb partitions. Each partition
is divided into sixty-four 256KB blocks (8 x 64 = 512 blocks).
Each block is divided into as many as 256 1KB programming regions. Each region is
divided into as many as thirty-two 32-byte segments
Table 1: Main Array Memory Map – 128Mb, 256Mb
128Mb
256Mb
Block #
Size
Size
(Mb)
Partition
(Mb)
Block #
Address Range
Address Range
7
16
16
16
16
16
63
07E0000-07FFFFF
32
32
32
32
32
127
FF0000-FFFFFF
.
.
.
.
.
.
.
.
.
.
.
.
56
55
0700000-071FFFF
06E0000-06FFFFF
112
111
FD0000-FDFFFF
6
5
4
3
0DE0000-0DFFFFF
.
.
.
.
.
.
.
.
.
.
.
.
48
47
0600000-061FFFF
05E0000-05FFFFF
96
95
0C00000-0C1FFFF
0BE0000-0BFFFFF
.
.
.
.
.
.
.
.
.
.
.
.
40
39
0500000-051FFFF
04E0000-04FFFFF
80
79
0A00000-0A1FFFF
09E0000-09FFFFF
.
.
.
.
.
.
.
.
.
.
.
.
32
31
0400000-041FFFF
03E0000-03FFFFF
64
63
0800000-081FFFF
07E0000-07FFFFF
.
.
.
.
.
.
.
.
.
.
.
.
24
0300000-031FFFF
48
0600000-061FFFF
PDF: 09005aef8448483a
128_256_512_65nm_g18.pdf - Rev. F 8/11 EN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
9
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