P30-65nm
15.5
Program and Erase Characteristics
Table 27: Program and Erase Specifications
V
V
PPH
PPL
Num
Symbol
Parameter
Unit
Note
Min
Conventional Word Programming
Single word 270
Buffered Programming
Typ
Max
Min
Typ
Max
Program
Time
W200
t
-
456
-
270
456
µs
1
PROG/W
Aligned 32-Wd, BP time
(32 Words)
-
-
-
-
-
310
310
375
505
900
716
900
-
-
-
-
-
310
310
375
505
900
716
900
Aligned 64-Wd, BP time
(64 Word)
Program
Time
Aligned 128-Wd, BP time
(128 Words)
W250
t
1140
1690
3016
1140
1690
3016
µs
1
PROG
Aligned 256-Wd, BP time
(256 Words)
one full buffer (512
Words)
Buffered Enhanced Factory Programming
W451
W452
t
t
Single byte
BEFP Setup
n/a
n/a
n/a
n/a
n/a
n/a
-
0.5
-
-
-
1,2
1
BEFP/B
Program
µs
20
BEFP/Setup
Erase and Suspend
W501
W600
W601
W602
t
t
t
t
Erase Time
128-KByte Array Block
Program suspend
Erase suspend
-
-
-
-
0.8
25
4.0
30
30
-
-
-
-
-
0.8
25
4.0
30
30
-
s
ERS/AB
SUSP/P
1
Suspend
Latency
25
25
µs
SUSP/E
ERS/SUSP
Erase to Suspend
500
500
1,3
blank check
-
Blank
Check
W702
t
Array Block
3.2
-
-
3.2
-
ms
-
BC/AB
Notes:
1.
Typical values measured at T = +25°C and nominal voltages. Performance numbers are valid for all speed versions.
C
Excludes system overhead. Sampled, but not 100% tested.
2.
3.
Averaged over entire device.
W602 is the typical time between an initial block erase or erase resume command and the a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures.
Datasheet
59
Sept 2012
OrderNumber:208042-06
MICRON [ MICRON TECHNOLOGY ]
