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N25Q512A83GSF40G 参数 Datasheet PDF下载

N25Q512A83GSF40G图片预览
型号: N25Q512A83GSF40G
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, Multiple I/O Serial Flash Memory  
ERASE Operations  
Table 29: Operations Allowed/Disallowed During Device States  
Note 1 applies to entire table  
Standby  
Program or  
Erase State  
Subsector Erase Suspend or  
Program Suspend State  
Erase Suspend  
State  
Operation  
State  
Yes  
Yes  
Yes  
Yes  
Yes  
Yes  
No  
Notes  
READ  
No  
No  
No  
No  
No  
Yes  
Yes  
Yes  
No  
No  
No  
Yes  
Yes  
No  
Yes  
Yes/No  
No  
2
3
4
5
6
7
8
PROGRAM  
ERASE  
WRITE  
No  
WRITE  
Yes  
READ  
Yes  
SUSPEND  
No  
1. The device can be in only one state at a time. Depending on the state of the device,  
some operations are allowed (Yes) and others are not (No). For example, when the de-  
vice is in the standby state, all operations except SUSPEND are allowed in any sector. For  
all device states except the erase suspend state, if an operation is allowed or disallowed  
in one sector, it is allowed or disallowed in all other sectors. In the erase suspend state, a  
PROGRAM operation is allowed in any sector except the one in which an ERASE opera-  
tion has been suspended.  
Notes:  
2. All READ operations except READ STATUS REGISTER and READ FLAG REGISTER. When is-  
sued to a sector or subsector that is simultaneously in an erase suspend state, the READ  
operation is accepted, but the data output is not guaranteed until the erase has comple-  
ted.  
3. All PROGRAM operations except PROGRAM OTP. In the erase suspend state, a PROGRAM  
operation is allowed in any sector (Yes) except the sector (No) in which an ERASE opera-  
tion has been suspended.  
4. Applies to the SECTOR ERASE or SUBSECTOR ERASE operation.  
5. Applies to the following operations: WRITE STATUS REGISTER, WRITE NONVOLATILE  
CONFIGURATION REGISTER, PROGRAM OTP, and DIE ERASE.  
6. Applies to the WRITE VOLATILE CONFIGURATION REGISTER, WRITE ENHANCED VOLA-  
TILE CONFIGURATION REGISTER, WRITE ENABLE, WRITE DISABLE, CLEAR FLAG STATUS  
REGISTER, WRITE EXTENDED ADDRESS REGISTER, ENTER 4-BYTE EXTENDED ADDRESS  
REGISTER, EXIT 4-BYTE EXTENDED ADDRESS REGISTER, or WRITE LOCK REGISTER opera-  
tion.  
7. Applies to the READ STATUS REGISTER or READ FLAG STATUS REGISTER operation.  
8. Applies to the PROGRAM SUSPEND or ERASE SUSPEND operation.  
PROGRAM/ERASE RESUME Command  
To initiate the PROGRAM/ERASE RESUME command, S# is driven LOW. The command  
code is input on DQ0. The operation is terminated by driving S# HIGH.  
When this command is executed, the status register write in progress bit is set to 1, and  
the flag status register program erase controller bit is set to 0. This command is ignored  
if the device is not in a suspended state.  
When the operation is in progress, the program or erase controller bit of the flag status  
register is set to 0. The flag status register must be polled for the operation status. When  
the operation completes, that bit is cleared to 1. Note that the flag status register must  
be polled even if operation times out.  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
66  
© 2011 Micron Technology, Inc. All rights reserved.