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N25Q512A13GF840E 参数 Datasheet PDF下载

N25Q512A13GF840E图片预览
型号: N25Q512A13GF840E
PDF下载: 下载PDF文件 查看货源
内容描述: 美光的串行NOR闪存3V ,多个I / O, 4KB扇区擦除N25Q512A [Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A]
分类和应用: 闪存
文件页数/大小: 91 页 / 1214 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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512Mb, Multiple I/O Serial Flash Memory  
Absolute Ratings and Operating Conditions  
Table 38: AC Timing Input/Output Conditions  
Symbol  
Description  
Min  
30  
Max  
30  
Units  
pF  
ns  
Notes  
CL  
Load capacitance  
1
Input rise and fall times  
Input pulse voltages  
5
0.2VCC to 0.8VCC  
0.3VCC to 0.7VCC  
V
2
Input timing reference voltages  
Output timing reference voltages  
V
VCC/2  
VCC/2  
V
1. Output buffers are configurable by user.  
2. For quad/dual operations: 0V to VCC  
Notes:  
.
Figure 45: AC Timing Input/Output Reference Levels  
Input levels1  
I/O timing  
reference levels  
0.8VCC  
0.7VCC  
0.5VCC  
0.3VCC  
0.2VCC  
1. 0.8VCC = VCC for dual/quad operations; 0.2VCC = 0V for dual/quad operations.  
Note:  
PDF: 09005aef84752721  
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
81  
© 2011 Micron Technology, Inc. All rights reserved.  
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