512Mb, Multiple I/O Serial Flash Memory
AC Characteristics and Operating Conditions
Table 41: AC Characteristics and Operating Conditions (Continued)
Parameter
Symbol
Min
Typ1
Max
Unit
Notes
WRITE VOLATILE CONFIGURATION REGISTER cycle
time
tWVCR
–
40
–
ns
WRITE VOLATILE ENHANCED CONFIGURATION
REGISTER cycle time
tWRVECR
–
40
–
ns
WRITE EXTENDED ADDRESS REGISTER cycle time
PAGE PROGRAM cycle time (256 bytes)
PAGE PROGRAM cycle time (n bytes)
tWREAR
tPP
–
–
–
40
–
5
5
ns
ms
ms
0.5
7
7
int(n/8) ×
0.0158
PAGE PROGRAM cycle time, VPP = VPPH ( 256 bytes)
PROGRAM OTP cycle time (64 bytes)
Subsector ERASE cycle time
–
–
–
–
–
–
–
0.4
0.2
5
–
ms
ms
s
7
7
tSSE
tSE
0.25
0.7
0.8
3
Sector ERASE cycle time
s
Sector ERASE cycle time (with VPP = VPPH
DIE ERASE/BULK ERASE cycle time
)
0.6
3
s
tBE
240
200
480
480
s
9
9
DIE ERASE/BULK ERASE cycle time (with VPP = VPPH
)
s
1. Typical values given for TA = 25 °C.
2. tCH + tCL must add up to 1/fC.
Notes:
3. Value guaranteed by characterization; not 100% tested.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS
REGISTER WRITE is set to 1.
6. VPPH should be kept at a valid level until the PROGRAM or ERASE operation has comple-
ted and its result (success or failure) is known.
7. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained with one sequence including all the bytes versus several sequences
of only a few bytes (1 < n < 256).
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4
int(15.3) =16.
9. BULK ERASE command only available for part numbers N25Q512A83GSF40x and
N25Q512A83G1240x.
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