512Mb, Multiple I/O Serial Flash Memory
AC Characteristics and Operating Conditions
AC Characteristics and Operating Conditions
Table 41: AC Characteristics and Operating Conditions
Parameter
Symbol
Min
Typ1
Max
Unit
Notes
Clock frequency for all commands other than
READ (SPI-ER, QIO-SPI protocol)
fC
DC
–
108
MHz
Clock frequency for READ commands
Clock HIGH time
fR
tCH
tCL
DC
4
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
54
–
–
–
–
–
–
–
–
–
–
–
–
8
7
8
5
6
–
–
–
–
–
–
8
8
–
–
–
MHz
ns
2
Clock LOW time
4
ns
1
Clock rise time (peak-to-peak)
Clock fall time (peak-to-peak)
S# active setup time (relative to clock)
S# not active hold time (relative to clock)
Data in setup time
tCLCH
tCHCL
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL1
tSHSL2
tSHQZ
tCLQV
0.1
0.1
4
V/ns
V/ns
ns
3, 4
3, 4
4
ns
2
ns
Data in hold time
3
ns
S# active hold time (relative to clock)
S# not active setup time (relative to clock)
S# deselect time after a READ command
S# deselect time after a nonREAD command
Output disable time
4
ns
4
ns
20
50
–
ns
ns
ns
3
Clock LOW to output valid under 30pF
STR
–
ns
DTR
STR
DTR
–
ns
Clock LOW to output valid under 10pF
–
ns
–
ns
Output hold time (clock LOW)
Output hold time (clock HIGH)
tCLQX
tCHQX
tHLCH
tCHHH
tHHCH
tCHHL
tHHQX
tHLQZ
tWHSL
tSHWL
tVPPHSL
1
ns
1
ns
HOLD command setup time (relative to clock)
HOLD command hold time (relative to clock)
HOLD command setup time (relative to clock)
HOLD command hold time (relative to clock)
HOLD command to output Low-Z
4
ns
4
ns
4
ns
4
ns
–
ns
3
3
5
5
6
HOLD command to output High-Z
Write protect setup time
–
ns
20
100
200
ns
Write protect hold time
ns
Enhanced VPPH HIGH to S# LOW for extended and
dual I/O page program
ns
WRITE STATUS REGISTER cycle time
tW
tWNVCR
–
–
1.3
0.2
8
3
ms
s
Write NONVOLATILE CONFIGURATION REGISTER
cycle time
CLEAR FLAG STATUS REGISTER cycle time
tCFSR
–
40
–
ns
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n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN
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