512Mb, Multiple I/O Serial Flash Memory
ERASE Operations
mand to a sector that is in an erase suspend state; it also sets the flag status register bit 4
to 1, program failure/protection error, and leaves the write enable latch bit unchanged.
The commands allowed during an erase suspend state are shown in the Operations Al-
lowed/Disallowed During Device States table. When the ERASE resumes, it does not
check the new lock status of the WRITE LOCK REGISTER command.
During a PROGRAM SUSPEND operation, a READ operation is possible in any page ex-
cept the one in a suspended state. Reading from a page that is in a suspended state will
output indeterminate data. The commands allowed during a program suspend state in-
clude the WRITE VOLATILE CONFIGURATION REGISTER command and the WRITE
ENHANCED VOLATILE CONFIGURATION REGISTER command.
It is possible to nest a PROGRAM/ERASE SUSPEND operation inside a PROGRAM/
ERASE SUSPEND operation just once. Issue an ERASE command and suspend it. Then
issue a PROGRAM command and suspend it also. With the two operations suspended,
the next PROGRAM/ERASE RESUME command resumes the latter operation, and a sec-
ond PROGRAM/ERASE RESUME command resumes the former (or first) operation.
Table 28: Suspend Parameters
Parameter
Condition
Typ
700
5
Max
Units Notes
Erase to suspend
Program to suspend
Sector erase or erase resume to erase suspend
Program resume to program suspend
–
–
–
µs
µs
µs
1
1
1
Subsector erase to sus-
pend
Subsector erase or subsector erase resume to erase sus-
pend
50
Suspend latency
Suspend latency
Suspend latency
Program
7
–
–
–
µs
µs
µs
2
2
3
Subsector erase
Erase
15
15
1. Timing is not internally controlled.
2. Any READ command accepted.
Notes:
3. Any command except the following are accepted: SECTOR, SUBSECTOR, or DIE ERASE;
WRITE STATUS REGISTER; WRITE NONVOLATILE CONFIGURATION REGISTER; and PRO-
GRAM OTP.
PDF: 09005aef84752721
n25q_512mb_1ce_3V_65nm.pdf - Rev. O 05/13 EN
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