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N25Q128A11B1241F 参数 Datasheet PDF下载

N25Q128A11B1241F图片预览
型号: N25Q128A11B1241F
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位, 1.8 V ,多个I / O , 4 KB的界别分组擦除引导扇区, XIP启用,串行闪存与108 MHz的SPI总线接口 [128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface]
分类和应用: 闪存
文件页数/大小: 185 页 / 5874 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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Memory organization  
N25Q128 - 1.8 V  
8
Memory organization  
The memory is organized as:  
„
„
„
16,777,216 bytes (8 bits each)  
256 sectors (64 Kbytes each)  
In Bottom and Top versions: 8 bottom (top) 64 Kbytes boot sectors with 16 subsectors  
(4 Kbytes) and 248 standard 64 KB sectors  
„
„
65,536 pages (256 bytes each)  
64 OTP bytes located outside the main memory array  
Each page can be individually programmed (bits are programmed from 1 to 0). The device is  
Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable, Subsector  
Erase is allowed on the 8 boot sectors (for devices with bottom or top architecture).  
Figure 9.  
Block diagram  
HOLD  
High Voltage  
Generator  
W/V  
Control Logic  
PP  
S
64 OTP bytes  
C
DQ0  
DQ1  
DQ2  
DQ3  
I/O Shift Register  
Status  
Register  
Address Register  
and Counter  
256 Byte  
Data Buffer  
FFFFFFh  
00000h  
000FFh  
256 bytes (page size)  
X Decoder  
AI13722a  
52/185  
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