256Mb: x4, x8, x16 SDRAM
Temperature and Thermal Impedance
Table 6: Thermal Impedance Simulated Values
Θ JA (°C/W)
Airflow =
Θ JA (°C/W)
Airflow =
Θ JA (°C/W)
Airflow =
2m/s
Die
Revision
Package
Substrate
0m/s
1m/s
Θ JB (°C/W) Θ JC (°C/W)
D
54-pin TSOP
(TG, P)
Low Con-
ductivity
81
44
63.8
47.3
50.8
41.6
51.2
35.1
105.6
93.5
81.9
66.3
55.9
42.0
57.6
44.5
44.8
38.1
47.8
32.2
98.1
88.8
81.9
62.7
51.1
39.9
45.3
39.1
31.4
31.4
19.7
18.6
89.5
87.6
69.5
60.7
42.1
34.9
10.3
High Con-
ductivity
54-ball VFBGA
(B4, F4)
Low Con-
ductivity
64.9
51.5
67
3.2
High Con-
ductivity
60-ball FBGA
(BB, FB)
Low Con-
ductivity
6.7
High Con-
ductivity
40.9
122.3
101.9
96.9
74.0
68.8
47.9
G
54-pin TSOP
(TG, P)
Low Con-
ductivity
20.7
11.5
10.9
High Con-
ductivity
54-ball VFBGA
(B4, F4)
Low Con-
ductivity
High Con-
ductivity
60-ball FBGA
(BB, FB)
Low Con-
ductivity
High Con-
ductivity
1. For designs expected to last beyond the die revision listed, contact Micron Applications
Engineering to confirm thermal impedance values.
Notes:
2. Thermal resistance data is sampled from multiple lots, and the values should be viewed
as typical.
3. These are estimates; actual results may vary.
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. R 10/12 EN
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