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MT48LC4M32LFFC 参数 Datasheet PDF下载

MT48LC4M32LFFC图片预览
型号: MT48LC4M32LFFC
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM [SYNCHRONOUS DRAM]
分类和应用: 动态存储器
文件页数/大小: 61 页 / 1390 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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ADVANCE  
128Mb: x16, x32  
MOBILE SDRAM  
TABLE OF CONTENTS  
Functional Block Diagram – 8 Meg x 16 ................  
Functional Block Diagram – 4 Meg x 32 ................  
54-Ball Pin Descriptions .........................................  
90-Ball Pin Descriptions .........................................  
5
6
7
8
Truth Table 2 (CKE) ................................................ 30  
Truth Table 3 (Current State, Same Bank) ..................... 31  
Truth Table 4 (Current State, Different Bank) ................. 33  
Absolute Maximum Ratings ................................... 35  
DC Electrical Characteristics  
Functional Description .........................................  
Initialization ......................................................  
Register Definition ............................................  
mode register ................................................  
Burst Length............................................  
9
9
9
9
9
and Operating Conditions ................................... 35  
AC Electrical Characteristics and Recommended  
Operating Conditions (Timing Table) ............. 36  
AC Functional Characteristics ................................ 37  
IDD Specifications and Conditions ......................... 37  
Capacitance ............................................................ 38  
Burst Type ............................................... 10  
CAS Latency ............................................ 11  
Operating Mode ...................................... 11  
Extended Mode Register ......................... 12  
Timing Waveforms  
Initialize and Load mode register...................... 40  
Power-Down Mode ............................................ 41  
Clock Suspend Mode ......................................... 42  
Auto Refresh Mode ............................................ 43  
Self Refresh Mode .............................................. 44  
Reads  
Read – Without Auto Precharge ................... 45  
Read – With Auto Precharge ........................ 46  
Single Read – Without Auto Precharge ........ 47  
Single Read – With Auto Precharge ............. 48  
Alternating Bank Read Accesses ................... 49  
Read – Full-Page Burst .................................. 50  
Read – DQM Operation ................................ 51  
Writes  
Temperature Compensated Self Refresh . 12  
Partial Array Self Refresh......................... 13  
Commands ............................................................. 14  
Truth Table 1 (Commands and DQM Operation) ............ 14  
Command Inhibit ............................................. 15  
No Operation (NOP).......................................... 15  
Load mode register ............................................ 15  
Active ................................................................ 15  
Read ................................................................ 15  
Write ................................................................ 15  
Precharge ........................................................... 15  
Auto Precharge .................................................. 15  
Burst Terminate ................................................. 15  
Auto Refresh ...................................................... 16  
Self Refresh ........................................................ 16  
Operation................................................................ 17  
Bank/Row Activation ........................................ 17  
Reads ................................................................ 18  
Writes ................................................................ 24  
Precharge ........................................................... 26  
Concurrent Auto Precharge .............................. 28  
Power-Down ...................................................... 26  
Clock Suspend ................................................... 27  
Burst Read/Single Write .................................... 27  
Write – Without Auto Precharge ................. 52  
Write – With Auto Precharge ....................... 53  
Single Write – Without Auto Precharge....... 54  
Single Write – With Auto Precharge ............ 55  
Alternating Bank Write Accesses ................. 56  
Write – Full-Page Burst ................................. 57  
Write – DQM Operation .............................. 58  
54-Ball VFBGA Drawing ............................... 59  
90-Ball FBGA Drawing ................................. 60  
FBGA/VFBGA Device Marking ..................... 61  
128Mb: x16, x32 Mobile SDRAM  
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2002, Micron Technology, Inc.  
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