128Mb: x4, x8, x16
SDRAM
AC FUNCTIONAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 11; notes appear on page 36)
PARAMETER
SYMBOL
-7E -75 -8E UNITS NOTES
t
t
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
CCD
1
1
1
0
0
2
0
4
2
1
1
2
2
3
2
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
1
1
1
0
0
2
0
4
2
1
1
2
2
3
2
CK
CK
CK
CK
CK
CK
CK
17
14
14
17
17
17
17
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CKED
t
PED
t
DQD
DQM
DQZ
t
t
t
DWD
t
DAL
CK 15, 21
CK 16, 21
CK
CK
t
t
DPL
BDL
CDL
RDL
17
17
t
t
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or REFRESH command
Data-out to high-impedance from PRECHARGE command
CK 16, 21
t
MRD
CK
CK
CK
26
17
17
t
t
CL = 3
CL = 2
ROH(3)
ROH(2)
128Mb: x4, x8, x16 SDRAM
128MSDRAM_E.p65 – Rev. E; Pub. 1/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
35
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