128Mb: x4, x8, x16
SDRAM
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only, and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD/VDDQ Supply
Relative to VSS ........................................ -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to VSS ........................................ -1V to +4.6V
Operating Temperature,
TA (commercial) ........................................ 0°C to +70°C
Operating Temperature,
TA (extended; IT parts) ......................... -40°C to +85°C
Storage Temperature (plastic) ................ -55°C to +150°C
Power Dissipation .......................................................... 1W
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 36; VDD/VDDQ = +3.3V 0.3V)
PARAMETER/CONDITION
SYMBOL
VDD/VDDQ
VIH
MIN
3
MAX UNITS NOTES
Supply Voltage
3.6
VDD + 0.3
0.8
V
V
V
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
2
22
22
VIL
-0.3
Input Leakage Current:
Any input 0V ≤ VIN ≤ VDD
(All other pins not under test = 0V)
II
-5
5
µA
Output Leakage Current: DQs are disabled; 0V ≤ VOUT ≤ VDDQ
IOZ
-5
5
µA
V
Output Levels:
VOH
2.4
–
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
VOL
–
0.4
V
IDD SPECIFICATIONS AND CONDITIONS
(Notes: 1, 5, 6, 11, 13; notes appear on page 36; VDD/VDDQ = +3.3V 0.3V)
MAX
-75 -8E UNITS NOTES
PARAMETER/CONDITION
SYMBOL -7E
Operating Current: Active Mode;
IDD1
IDD2
IDD3
160 150 140
mA
mA
mA
3, 18,
19, 32
Burst = 2; READ or WRITE; tRC = tRC (MIN)
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
2
2
2
32
Standby Current: Active Mode;
50
50
40
3, 12,
19, 32
CKE = HIGH; CS# = HIGH; All banks active after tRCD met;
No accesses in progress
Operating Current: Burst Mode; Continuous burst;
READ or WRITE; All banks active
IDD4
165 150 140
330 310 270
mA
3, 18,
19, 32
Auto Refresh Current
tRFC = tRFC (MIN)
tRFC = 15.625µs
IDD5
IDD6
mA
mA
3, 12,
18, 19,
32, 33
CKE = HIGH; CS# = HIGH
3
3
3
Self Refresh Current:
Standard
IDD7
IDD7
2
1
2
1
2
1
mA
mA
4
CKE ≤ 0.2V
Low power (L)
128Mb: x4, x8, x16 SDRAM
128MSDRAM_E.p65 – Rev. E; Pub. 1/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
33
MICRON [ MICRON TECHNOLOGY ]
