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MT48LC8M16A2FB-8EL 参数 Datasheet PDF下载

MT48LC8M16A2FB-8EL图片预览
型号: MT48LC8M16A2FB-8EL
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM [SYNCHRONOUS DRAM]
分类和应用: 动态存储器
文件页数/大小: 59 页 / 1835 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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128Mb: x4, x8, x16  
SDRAM  
CLOCK SUSPEND  
The clock suspend mode occurs when a column ac-  
cess/burst is in progress and CKE is registered LOW. In  
the clock suspend mode, the internal clock is deacti-  
vated, “freezing” the synchronous logic.  
Clock suspend mode is exited by registering CKE  
HIGH; the internal clock and related operation will re-  
sume on the subsequent positive clock edge.  
For each positive clock edge on which CKE is sampled  
LOW, the next internal positive clock edge is suspended.  
Any command or data present on the input pins at the  
time of a suspended internal clock edge is ignored; any  
data present on the DQ pins remains driven; and burst  
counters are not incremented, as long as the clock is  
suspended. (See examples in Figures 22 and 23.)  
BURST READ/SINGLE WRITE  
The burst read/single write mode is entered by pro-  
gramming the write burst mode bit (M9) in the mode  
register to a logic 1. In this mode, all WRITE commands  
result in the access of a single column location (burst of  
one), regardless of the programmed burst length. READ  
commandsaccesscolumnsaccordingtotheprogrammed  
burst length and sequence, just as in the normal mode of  
operation (M9 = 0).  
T0  
T1  
T2  
T3  
T4  
T5  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CLK  
CKE  
CLK  
CKE  
INTERNAL  
CLOCK  
INTERNAL  
CLOCK  
READ  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
ADDRESS  
DQ  
NOP  
WRITE  
NOP  
NOP  
COMMAND  
ADDRESS  
BANK,  
COL n  
BANK,  
COL n  
D
OUT  
D
OUT  
D
n + 2  
OUT  
DOUT  
n + 3  
n
n + 1  
D
n
IN  
D
n + 1  
IN  
DIN  
n + 2  
DIN  
NOTE: For this example, CAS latency = 2, burst length = 4 or greater, and  
DQM is LOW.  
NOTE: For this example, burst length = 4 or greater, and DM  
DONT CARE  
is LOW.  
Figure 22  
Clock Suspend During WRITE Burst  
Figure 23  
Clock Suspend During READ Burst  
128Mb: x4, x8, x16 SDRAM  
128MSDRAM_E.p65 Rev. E; Pub. 1/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2001, Micron Technology, Inc.  
25  
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