欢迎访问ic37.com |
会员登录 免费注册
发布采购

MT48H16M32LFCM-75L 参数 Datasheet PDF下载

MT48H16M32LFCM-75L图片预览
型号: MT48H16M32LFCM-75L
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB :梅格32 ×16 , 16兆×32移动SDRAM [512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 73 页 / 2407 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第18页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第19页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第20页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第21页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第23页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第24页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第25页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第26页  
512Mb : 32 Me g x 16, 16 Me g x 32 Mo b ile SDRAM  
Op e ra t io n s  
Upon exiting the self refresh mode, AUTO REFRESH commands must be issued every  
7.8125µs or less as both SELF REFRESH and AUTO REFRESH utilize the row refresh  
counter.  
De e p Po w e r-Do w n  
Deep power-down is an operating mode used to achieve maximum power reduction by  
eliminating the power of the whole memory array of the devices. Array data will not be  
retained once the device enters deep power-down mode.  
This mode is entered by having all banks idle then CS# and WE# held LOW with RAS#  
and CAS# held HIGH at the rising edge of the clock, while CKE is LOW. This mode is  
exited by asserting CKE HIGH.  
Op e ra t io n s  
Ba n k/Ro w Act iva t io n  
Before any READ or WRITE commands can be issued to a bank within the SDRAM, a row  
in that bank must be opened.” This is accomplished via the ACTIVE command, which  
selects both the bank and the row to be activated (see Figure 9 on page 23).  
After opening a row (issuing an ACTIVE command), a READ or WRITE command may be  
t
t
issued to that row, subject to the RCD specification. RCD (MIN) should be divided by  
the clock period and rounded up to the next whole number to determine the earliest  
clock edge after the ACTIVE command on which a READ or WRITE command can be  
t
entered. For example, a RCD specification of 20ns with a 125 MHz clock (8ns period)  
results in 2.5 clocks, rounded to 3. This is reflected in Figure 10 on page 23, which covers  
t
t
any case where 2 < RCD (MIN)/ CK 3. (The same procedure is used to convert other  
specification limits from time units to clock cycles.)  
A subsequent ACTIVE command to a different row in the same bank can only be issued  
after the previous active row has been closed” (precharged). The minimum time  
t
interval between successive ACTIVE commands to the same bank is defined by RC.  
A subsequent ACTIVE command to another bank can be issued while the first bank is  
being accessed, which results in a reduction of total row-access overhead. The  
minimum time interval between successive ACTIVE commands to different banks is  
t
defined by RRD.  
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03  
MT48H32M16LF_1.fm - Rev. H 6/07 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
22  
©2005 Micron Technology, Inc. All rights reserved.