欢迎访问ic37.com |
会员登录 免费注册
发布采购

MT48H16M32LFCM-75L 参数 Datasheet PDF下载

MT48H16M32LFCM-75L图片预览
型号: MT48H16M32LFCM-75L
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB :梅格32 ×16 , 16兆×32移动SDRAM [512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 73 页 / 2407 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第12页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第13页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第14页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第15页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第17页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第18页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第19页浏览型号MT48H16M32LFCM-75L的Datasheet PDF文件第20页  
512Mb : 32 Me g x 16, 16 Me g x 32 Mo b ile SDRAM  
Re g ist e r De fin it io n  
Ext e n d e d Mo d e Re g ist e r (EMR)  
The EMR controls the functions beyond those controlled by the mode register. These  
additional functions are special features of the mobile device that helps reduce overall  
system power consumption. They include temperature-compensated self refresh  
(TCSR) control, partial-array self refresh (PASR), and output drive strength.  
The EMR is programmed via the MODE REGISTER SET command (BA1 = 1, BA0 = 0) and  
retains the stored information until it is programmed again or the device loses power.  
Fig u re 7:  
CAS La t e n cy  
T0  
T1  
T2  
T3  
CLK  
COMMAND  
READ  
NOP  
t
NOP  
t
LZ  
OH  
DOUT  
DQ  
t
AC  
CL = 2  
T0  
T1  
T2  
T3  
T4  
CLK  
COMMAND  
READ  
NOP  
NOP  
NOP  
t
t
LZ  
OH  
DOUT  
DQ  
t
AC  
CL = 3  
DONT CARE  
UNDEFINED  
Notes: 1. Each READ command may be to any bank. DQM is LOW.  
2. For CL = 2, DQM should be taken LOW at READ command. For CL = 3, DQM should be taken  
LOW one cycle after the READ command.  
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03  
MT48H32M16LF_1.fm - Rev. H 6/07 EN  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
16  
©2005 Micron Technology, Inc. All rights reserved.