Table 56: Electrical Characteristics and AC Operating Conditions (Continued)
Notes 1–8 apply to the entire table
DDR3-800
Min Max
DDR3-1066
DDR3-1333
DDR3-1600
Parameter
Symbol
tQSH
tQSL
tLZDQS
tHZDQS
tRPRE
Min
0.38
0.38
–600
–
Max
–
Min
0.40
0.40
–500
–
Max
–
Min
0.40
0.40
–450
–
Max
–
Unit Notes
DQS, DQS# differential output high time
DQS, DQS# differential output low time
DQS, DQS# Low-Z time (RL - 1)
0.38
0.38
–800
–
–
–
CK
CK
ps
21
–
–
–
21
400
300
250
225
22, 23
22, 23
23, 24
23, 27
DQS, DQS# High-Z time (RL + BL/2)
DQS, DQS# differential READ preamble
DQS, DQS# differential READ postamble
400
300
250
225
ps
0.9
Note 24
Note 27
0.9
Note 24
Note 27
0.9
Note 24
Note 27
0.9
Note 24
Note 27
CK
CK
tRPST
0.3
0.3
0.3
0.3
Command and Address Timing
DLL locking time
tDLLK
tIS
512
200
–
–
512
125
–
–
512
65
–
–
512
45
–
–
CK
ps
28
CTRL, CMD, ADDR
setup to CK,CK#
Base (specification)
29, 30,
44
(AC175)
V
REF @ 1 V/ns
375
350
–
–
300
275
–
–
240
190
–
–
220
170
–
–
ps
ps
20, 30
CTRL, CMD, ADDR
setup to CK,CK#
Base (specification)
tIS
(AC150)
29, 30,
44
V
REF @ 1 V/ns
CTRL, CMD, ADDR hold Base (specification)
from CK,CK#
500
275
375
900
–
–
–
–
425
200
300
780
–
–
–
–
340
140
240
620
–
–
–
–
320
120
220
560
–
–
–
–
ps
ps
ps
ps
ns
ns
ns
ns
CK
20, 30
29, 30
20, 30
41
tIH
(DC100)
V
REF @ 1 V/ns
Minimum CTRL, CMD, ADDR pulse width
ACTIVATE to internal READ or WRITE delay
PRECHARGE command period
tIPW
tRCD
tRP
tRAS
tRC
See Speed Bin Tables (page 74) for tRCD
See Speed Bin Tables (page 74) for tRP
See Speed Bin Tables (page 74) for tRAS
See Speed Bin Tables (page 74) for tRC
31
31
ACTIVATE-to-PRECHARGE command period
ACTIVATE-to-ACTIVATE command period
ACTIVATE-to-ACTIVATE x4/x8 (1KB page
31, 32
31, 43
31
tRRD
MIN = greater of MIN = greater of MIN = greater of MIN = greater of
4CK or 10ns 4CK or 7.5ns 4CK or 6ns 4CK or 6ns
MIN = greater of 4CK or 10ns MIN = greater of 4CK or 7.5ns
minimum command
period
size)
x16 (2KB page size)
CK
ns
31
31
Four ACTIVATE
windows
x4/x8 (1KB page
size)
tFAW
40
–
37.5
–
30
–
30
–
x16 (2KB page size)
50
–
50
–
45
–
40
–
ns
ns
31
Write recovery time
tWR
MIN = 15ns; MAX = n/a
MIN = greater of 4CK or 7.5ns; MAX = n/a
31, 32,
33,34
Delay from start of internal WRITE
tWTR
CK
31, 34
transaction to internal READ command
MICRON [ MICRON TECHNOLOGY ]
