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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
 浏览型号MT41J256M4的Datasheet PDF文件第96页浏览型号MT41J256M4的Datasheet PDF文件第97页浏览型号MT41J256M4的Datasheet PDF文件第98页浏览型号MT41J256M4的Datasheet PDF文件第99页浏览型号MT41J256M4的Datasheet PDF文件第101页浏览型号MT41J256M4的Datasheet PDF文件第102页浏览型号MT41J256M4的Datasheet PDF文件第103页浏览型号MT41J256M4的Datasheet PDF文件第104页  
1Gb: x4, x8, x16 DDR3 SDRAM  
Command and Address Setup, Hold, and Derating  
Table 59: Derating Values for tIS/tIH – AC175/DC100-Based  
ΔtIS, ΔtIH Derating (ps) – AC/DC-Based  
AC175 Threshold: VIH(AC) = VREF(DC) + 175mV, VIL(AC) = VREF(DC) - 175mV  
CMD/  
ADDR  
Slew Rate  
V/ns  
CK, CK# Differential Slew Rate  
4.0 V/ns  
3.0 V/ns  
2.0 V/ns  
1.8 V/ns  
1.6 V/ns  
1.4 V/ns  
1.2 V/ns  
1.0 V/ns  
ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIH ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH  
2.0  
1.5  
1.0  
88  
59  
0
50  
34  
0
88  
59  
0
50  
34  
0
88  
59  
50  
34  
96  
67  
8
58  
42  
8
104  
75  
66  
50  
16  
112  
83  
74  
58  
24  
120  
91  
84  
68  
34  
128 100  
99  
40  
84  
50  
16  
24  
32  
0
0
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
–2  
–4  
–2  
–4  
6
2
4
14  
10  
5
12  
6
22  
18  
20  
14  
8
30  
26  
30  
24  
18  
8
38  
34  
29  
23  
5
46  
40  
–2  
–4  
–6  
–10  
–16  
–26  
–40  
–60  
–6  
–10  
–16  
–26  
–40  
–60  
–6  
–10  
–16  
–26  
–40  
–60  
–2  
–11  
–17  
–35  
–62  
–11  
–17  
–35  
–62  
–11  
–17  
–35  
–62  
–3  
–8  
0
13  
21  
34  
–9  
–18  
–32  
–52  
–1  
–10  
–24  
–44  
7
–2  
15  
24  
–27  
–54  
–19  
–46  
–11  
–38  
–16  
–36  
–2  
–6  
–26  
10  
–30  
–22  
–10  
Table 60: Derating Values for tIS/tIH – AC150/DC100-Based  
ΔtIS, ΔtIH Derating (ps) – AC/DC-Based  
AC150 Threshold: VIH(AC) = VREF(DC) + 150mV, VIL(AC) = VREF(DC) - 150mV  
CMD/  
ADDR  
Slew Rate  
V/ns  
CK, CK# Differential Slew Rate  
4.0 V/ns  
3.0 V/ns  
2.0 V/ns  
1.8 V/ns  
1.6 V/ns  
1.4 V/ns  
1.2 V/ns  
1.0 V/ns  
ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIH ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH  
2.0  
1.5  
1.0  
75  
50  
0
50  
34  
0
75  
50  
0
50  
34  
0
75  
50  
50  
34  
83  
58  
8
58  
42  
8
91  
66  
16  
66  
50  
16  
99  
74  
24  
74  
58  
24  
107  
82  
84  
68  
34  
115 100  
90  
40  
84  
50  
32  
0
0
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0
0
–4  
0
0
–4  
8
8
4
16  
16  
16  
15  
6
12  
6
24  
24  
24  
23  
14  
–1  
20  
14  
8
32  
32  
32  
31  
22  
7
30  
24  
18  
8
40  
40  
40  
39  
30  
15  
46  
40  
0
0
–4  
–10  
–16  
–26  
–40  
–60  
–10  
–16  
–26  
–40  
–60  
–10  
–16  
–26  
–40  
–60  
–2  
0
0
0
8
–8  
0
34  
–1  
–10  
–25  
–1  
–10  
–25  
–1  
–10  
–25  
7
–18  
–32  
–52  
–10  
–24  
–44  
–2  
24  
–2  
–17  
–16  
–36  
–6  
–26  
10  
–9  
–10  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
100  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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