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MT250QL02GABB1E120SATES 参数 Datasheet PDF下载

MT250QL02GABB1E120SATES图片预览
型号: MT250QL02GABB1E120SATES
PDF下载: 下载PDF文件 查看货源
内容描述: [3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase]
分类和应用:
文件页数/大小: 97 页 / 1038 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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256Mb, 3V Multiple I/O Serial Flash Memory  
Nonvolatile Configuration Register  
Table 7: Nonvolatile Configuration Register (Continued)  
Bit Name  
Settings  
Description  
Notes  
0
Number of  
address bytes  
0 = Enable 4-byte address mode  
1 = Enable 3-byte address mode  
Defines the number of address bytes for a com-  
mand.  
during command (Default)  
entry  
1. The number of cycles must be set to accord with the clock frequency, which varies by the  
type of FAST READ command (See Supported Clock Frequencies table). Insufficient dum-  
my clock cycles for the operating frequency causes the memory to read incorrect data.  
Notes:  
2. When bits 2 and 3 are both set to 0, the device operates in quad I/O protocol.  
CCMTD-1725822587-3368  
mt25q-qljs-L256-ABA-xxT.pdf - Rev. K 07/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
29  
© 2014 Micron Technology, Inc. All rights reserved.  
 
 
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